Through silicon via(TSV)forms the core structure of 3D advanced packaging and heterogeneous integrated chips. During the actual service of the chip，TSVs undergo creep deformation and encounter the risk of defects such as internal cracks and voids due to the persistence of high temperature and stress. In this study，we analyzed the creep behavior and structural characteristics of TSV grains under specific orientations based on nanoindentation and electron backscatter diffraction imaging，focusing on the influence of grain orientation on the creep behavior and structural stability. Finite element simulation of the nanoindentation test was conducted using the crystal plasticity intrinsic theory to further analyze the mechanical properties of TSV grains and the stress-strain evolution of grains with different orientations during the loading process. It was observed that grain orientation significantly affects the structural properties of TSVs. TSV grains with grain axes close to the mixed orientation of[001] and[101] exhibit lower creep effects，can absorb localized stresses through dislocation motions when subjected to loading，and exhibit good structural stability.