A novel High-k Schottky(HKS)diode integrating a High-k(HK)region and Schottky contact at the anode terminal is proposed for β-Ga2O3 power devices. Compared with conventional Junction Barrier Schottky(JBS) diodes，the new structure is designed to utilize high-dose bound charges formed at the HK region surface under reverse bias to effectively guide electric field lines emanating from the drift region，thereby optimizing electric field distribution and significantly improving reverse characteristics. Calibration-based simulations demonstrate that the HKS diode outperforms JBS counterparts across various parameter sets. At a region spacing of 1. 5 μm，the breakdown voltage is increased by 20. 2% relatively，while the specific on-resistance rises only by 9. 4%，achieving a 32. 2% enhancement in power figure of merit. Further investigations reveal that stable performance is maintained by the HKS diode under 1×1012 cm.2 interface charges，confirming its process robustness.