Research on On-Chip Distributed Integration Temperature Sensing Technology for GaN HEMT
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(University of Electronic Science and Technology of China，Chengdu 611731，P. R. China)
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摘要:
针对于目前主流的 GaN HEMT的温度监测存在的准确度不足、破坏性大、非实时监测等问题，提出了一种适用于 GaN HEMT的片上分布式集成温度传感技术，通过热仿真找出发热极值区域，在该区域分布式集成温度传感器，分布式集成温度传感技术的传感功能表征准确度高、工艺简单、兼容性高、多电位检测以及成本低廉。经实验证实，这些传感器不会对 GaN HEMT的电学性能造成不良影响。最后，针对传感器的温度特性进行表征验证工作，结果表明，传感器展现出极为优异的线性度(≥0. 999 7)、高灵敏度(≥0. 23 mV/℃)以及高达 96%的准确度。本研究中的集成分布式传感技术，能够精准检测芯片发热的极值区域，可用于优化芯片版图设计，有效提升芯片及功率系统的热稳定性。
Abstract:
The existing mainstream temperature monitoring of GaN HEMTs faces various challenges，such as insufficient accuracy，high destructiveness，and non-real-time monitoring. In this study，we proposed an on-chip distributed integrated temperature sensing technology suitable for GaN HEMTs. The area with the extreme heat generation was determined via thermal simulation，and temperature sensors were distributed and integrated in this area. The sensing function of the distributed integrated temperature sensing technology was characterized by high accuracy，simple process，high compatibility，multi-potential detection，and low cost. The experimental results indicate that these sensors do not adversely affect the electrical performance of GaN HEMTs. Lastly，the temperature characteristics of the sensors were characterized and verified. The results indicate that the sensors exhibit excellent linearity( ≥0. 999 7)，high sensitivity( ≥0. 23 mV/℃)，and an accuracy as high as 96%. The proposed integrated distributed sensing technology can accurately detect the extreme heat generation area of the chip，and can be used to optimize the chip layout design，thereby improving the thermal stability of the chip and the power system.
