Phase change memory(PCM) stores data through resistance changes between the crystalline and amorphous states in the phase change materials. However，the existing optimization strategies face limitations in controlling the linear resistance distribution. These limitations are primarily attributed to the complexity of pulse parameter selection， thereby reducing the accuracy and stability of read-write performance. In this study， we systematically investigated the effects of adjusting the amplitude of RESET and SET pulses and increasing the pulse repetition on the linear characteristics of PCM resistance. The experimental results indicated that this combined strategy effectively enhanced the precision and linearity of the resistance distribution. Optimal pulse parameters were identified，and a simple and efficient optimization scheme was proposed，thereby providing theoretical and experimental support to enhance the PCM performance.