This paper presents a curvature-compensated bandgap reference voltage circuit designed in a 0. 35 μm CMOS process to address the issue of a high temperature coefficient in conventional higher-order temperature-compensated bandgap references. The design generates a compensating Tln(T)term by utilizing the voltage difference arising from currents with different temperature coefficients flowing through bipolar transistors，thereby correcting the curvature remaining after first-order compensation. The circuit was simulated using Spectre and a layout was designed. Simulation results demonstrate that with a 5 V supply voltage，the bandgap reference provides an output voltage of 1. 18 V. It achieves a temperature coefficient of 1. 4×10.6/℃ over the .40 °C to 125 °C temperature range and a power supply rejection ratio(PSRR)of .64 dB at 100 Hz.