一种高精度曲率补偿带隙基准的设计
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(合肥工业大学微电子学院合肥 230601)

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李睿(2001.),男(汉族),安徽安庆人,硕士研究生,研究方向为模拟集成电路设计。孟煦(1989.),男(汉族),安徽合肥人,副教授,研究方向为射频、模拟集成电路设计。通信作者。

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TN432

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Design of a High-precision Curvature-compensated Bandgap Reference
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(School of Microelectronics,Hefei University of Technology,Hefei 230601,P. R. China)

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    摘要:

    为了满足电源管理芯片对高精度和低电源噪声电源电压的需求,设计了一款基于 SMIC 180 nm工艺设计的带隙基准电路。提出的带隙基准基本工作电压 3.3 V与 1.8 V电源电压,电路利用两种不同温度系数的电流,处理得到高阶补偿电流,用以补偿三极管基极发射极电压中的高阶非线性项,从而产生高阶补偿电压;通过内建共模反馈,在输出级的作用下,增强输出的抗电源噪声能力,使得整体电路的电源抑制能力得到了明显改善。仿真结果表明,在正常工作时,电路输出电压为 1.496 V,在.40~110 ℃工作温度范围内,温度系数为 3. 801×10-6/℃,电源抑制比为 .108 dB@10Hz。

    Abstract:

    In order to meet the power-management chip's demand for high-precision and low-noise power-supply voltage,this paper proposes a bandgap reference circuit based on the SMIC 180-nm process. The proposed bandgap reference has a basic working voltage of 3. 3 V and a power-supply voltage of 1. 8 V. The circuit uses two currents with different temperature coefficients to process high-order compensation currents to compensate for the high-order nonlinear terms in the base-emitter voltage of the transistor,thereby generating high-order compensation voltages. Using the built-in common-mode feedback,under the action of the output stage,the output's ability to resist power-supply noise is enhanced,so that the overall circuit power-supply rejection ability is significantly improved. The simulation results show that in normal operation,the circuit output voltage was 1. 496 V,and in the operating temperature range of .40 to 110 °C,the temperature coefficient was 3. 801×10.6/°C,and the power-supply rejection ratio was .108 dB at 10 Hz.

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  • 收稿日期:2025-02-06
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  • 在线发布日期: 2026-01-27
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