Two 33–37 GHz microwave monolithic integrated circuit(MMIC)power amplifiers with output power of 34 dBm were designed on the basis of a 0. 15-μm gallium arsenide(GaAs)pseudomorphic high electron mobility transistor(pHEMT)process. Cluster-followed synthesis and a "bus bar" structure were designed to realize power combination. Furthermore，the impact of amplitude and phase consistency on output performance were compared and analyzed. Design，tape-out，and testing were performed as well for these two schemes. Both power amplifier designs adopt a cascade structure with three stages achieving stable and flat output in the working frequency band through gain compensation technology. Test results show that under a 6-V power supply condition，the power gain was more than 20 dB with saturation output power exceeding 33. 7 dBm and 34 dBm respectively，and power-added efficiency(PAE) in the range 33–37 GHz，with a chip area of 3. 0 mm×2. 4 mm.