MEMS悬臂梁微波功率检测芯片的电容模型
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(南京邮电大学集成电路科学与工程学院,南京 210023)

作者简介:

丁治尹(2001.),女(汉族),江苏南通人,硕士研究生,研究方向为 MEMS微波功率检测芯片。王德波(1983.),男(汉族),山东新泰人,副教授,研究方向为微波器件与电路的研发。通信作者。

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中图分类号:

TN40

基金项目:

国家自然科学基金资助项目(61904089);江苏省自然科学基金资助项目(BK20190731)


Capacitance Model of a MEMS Cantilever Beam Microwave Power Detection Chip
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(College of Integrated Circuit Science and Engineering,Nanjing University of Posts and Telecommunications,Nanjing 210023, P. R. China)

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    摘要:

    为有效降低悬臂梁结构 MEMS微波功率检测芯片边缘场效应的影响,改善检测芯片的微波特性,建立了 MEMS微波功率检测芯片悬臂梁电容模型,对悬臂梁结构进行了优化设计,利用有限元仿真软件研究了阵列过孔尺寸和密度对边缘场电容的补偿作用。有限元仿真结果表明,过孔大小为 10 μm×10 μm、过孔间距为 10 μm时结构最优,三种结构相同尺寸不同的 MEMS悬臂梁耦合电容计算值分别为 67.6 fF、101. 4 fF、135. 3 fF,有限元仿真得到的等效电容值分别为 67. 3 fF、100. 5 fF、134. 1 fF,MEMS悬臂梁边缘场电容的影响分别被降低至 0. 4%、0. 9%和 0. 9%。实验结果表明,检测芯片 8~12 GHz下回波损耗均小于 .10. 6 dB,10 GHz下三个系统的灵敏度分别为 16. 3 fF/W、65. 6 fF/W和 144. 4 fF/W,为研究 MEMS悬臂梁电容模型提供了一定的参考价值。

    Abstract:

    To effectively reduce the influence of edge field effect on the micro-electromechanical systems(MEMS) microwave power detection chip of a cantilever-beam structure and improve the microwave characteristics of the detection chip,we established a cantilever-beam capacitance model in this study. The cantilever-beam structure was optimized,and the compensation effect of the array hole size and density on edge field capacitance was studied using finite element simulation software. The finite element simulation results showed that the structure was optimal when the hole size was 10 μm×10 μm and hole spacing was 10 μm. The calculated coupling capacitance values of three MEMS cantilever beams were 67. 6,101. 4,and 135. 3 fF,respectively. The equivalent capacitance values obtained using the finite element simulation were 67. 3,100. 5,and 134. 1 fF,respectively,and the influence of the edge field capacitance of the MEMS cantilever beams decreased to 0. 4%,0.9% and 0.9%,respectively. The experimental results showed that the return loss of the detection chip was less than .10. 6 dB at 8–12 GHz,and the sensitivities of the three systems at 10 GHz were 16. 3,65. 6,and 144. 4 fF/W,respectively,which provide reference values for studying the MEMS cantilever-beam capacitance model.

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  • 收稿日期:2024-07-31
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  • 在线发布日期: 2025-08-22
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