Based on a 300-mm 0.18-μm MS 5-V process platform, a 1k×16 one-time programmable (OTP) device is designed and streamed, and the structure, working principle, and process of the storage unit that may affect the data retention life are analyzed. To model the retention characteristics of OTP devices, we conducted high-temperature aging experiments using different samples according to the Arrhenius life model, and data were collected after testing. Additionally, the maximum retention time of the sample data was calculated using linear fitting under conditions of 225,250, and 275 ℃. Finally, under the worst product conditions that may occur in the production process, the activation energy and maximum data retention time of the floating gate charge leakage under different failure conditions were calculated through the mathematical fitting of 1/(kT) and the data retention time curve.