Because of advantages such as low power consumption, high access speed, easy miniaturization, and strong anti-jamming ability, HfO₂-based ferroelectric random access memory (FeRAM) has a wide development space in the aerospace and aviation fields. However, the irradiation resistance of FeRAM in space environments has not been comprehensively studied. In this study, the electrical properties and ferroelectric domain structure changes of W/TiN/Hf0.5Zr0.5O₂(HZO)/TiN ferroelectric memories are evaluated after irradiation with 5 MeV protons at room and high temperature environments. Characterization using electrical and piezoresponse force microscopy (PFM) reveals that, after proton irradiation at room temperature, the values of the dielectric constant (ε_r) and residual polarization strength (P_r) of the capacitor increase, and the ferroelectric performance of the device improves. The irradiation of high-injection protons at room temperature is conducive to the operation of the memory in the space environment. However, with the increase in the irradiation ambient temperature, the ferroelectric performance of the HZO memory decreases, the leakage current increases, and the ferroelectric performance of the memory degrades significantly.