一种5.0~9.3 GHz低功耗宽带低噪声放大器设计
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(桂林电子科技大学 广西精密导航技术与应用重点实验室, 广西 桂林 541004)

作者简介:

韦善于(1998—),男(壮族),广西来宾人,硕士研究生,研究方向为射频集成电路与射频器件设计。 岳宏卫(1967—),男(汉族),广西贺州人,博士,研究员,硕士生导师,研究方向为微波器件及超导电子学器件研究。通信作者。

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中图分类号:

TN722.3

基金项目:

国家自然科学基金资助项目(12064003); 广西自然科学基金资助项目(2021JJA170081); 桂林电子科技大学研究生教育创新计划资助项目(2023YCXS031)


Design of a 5-9.3 GHz Low-Power Broadband Low-Noise Amplifier
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(Guangxi Key Laboratory of Precision Navigation Technology and Application, Guilin University of Electronic Technology, Guilin, Guangxi 541004, P. R. China)

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    摘要:

    针对Wi-Fi 6、Wi-Fi 6E(5 GHz、6 GHz)的低功耗、宽带宽等无线局域网(WLAN)设备需求,基于65 nm CMOS工艺设计了一款两级低功耗宽带低噪声放大器(LNA)。电路第一级采用结合互补共源电路的共源共栅结构,通过电感峰化技术和负反馈技术的运用,提高输入跨导,降低噪声,并拓展带宽和提高增益平坦度。第二级在共漏极缓冲器基础上引入辅助放大结构、电感峰化技术,实现抵消第一级共源管的噪声并拓展带宽。电路采用提出的前向衬底自偏置技术,以降低电路对电源电压的依赖,整体电路实现两路电流复用,从而有效降低了功耗。仿真结果表明,在5~9.3 GHz频带内LNA的S21为17.8±0.1 dB,S11小于-9 dB、S22小于-11.9 dB,噪声系数小于1.34 dB。在0.8 V电压下整体电路功耗为5.3 mW。

    Abstract:

    A two-stage, low-power, wideband low noise amplifier (LNA) was designed using a 65 nm CMOS process to address the requirements of wireless local area network (WLAN) devices for Wi-Fi 6 and Wi-Fi 6E (5 GHz, 6 GHz) applications. The first stage of the circuit adopts a cascode structure, combining the complementary common-source circuits. By incorporating inductor peaking and negative feedback techniques, the input transconductance is enhanced, the noise is reduced, and the bandwidth is expanded, resulting in improved gain flatness. The second stage introduces an auxiliary amplification structure and an inductor peaking technique based on a common-drain buffer, which cancels out the noise from the first-stage common-source transistor and further extends the bandwidth. Both stages employ the proposed self-forward body biasing technique to reduce the circuit’s dependency on the power supply voltage. The overall circuit implements dual-current reuse to effectively lower the power consumption. The simulation results demonstrate that the LNA achieves S21 of 17.8±0.1 dB within the frequency range of 5-9.3 GHz, with S11 less than -9 dB, S22 less than -11.9 dB, and NF below 1.34 dB. The overall circuit power consumption is 5.3 mW at a voltage of 0.8 V.

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  • 收稿日期:2023-07-30
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  • 在线发布日期: 2024-06-27
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