A 600 V High Voltage Gate Drive IC with dV/dt Noise Immunity
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( School of Microelectronics, Southeast University, Nanjing 210096, P. R. China)
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摘要:
设计了一种改进的电平移位电路。该电路采用交叉耦合结构,在不明显增加电路复杂度的情况下,显著提高了高压栅极驱动集成电路(HVIC)的噪声免疫能力。整个驱动器基于0.35 μm 600 V BCD工艺设计。仿真结果表明,设计的HVIC可以实现高达125 V/ns的dV/dt噪声免疫能力,并在15 V电源电压下允许VS负电压过冲达到-9.6 V。此外,从理论上分析了改进电平移位电路的本级传输延时。同传统HVIC相比,设计的HVIC整体的传输延时得到了优化,降低到54 ns左右。
Abstract:
An improved level shift circuit was designed, which used a cross-coupling structure to significantly improve the noise immunity of high voltage gate drive integrated circuits (HVIC) without significantly increasing the circuit complexity. The entire driver was designed in a 0.35 μm 600 V BCD process. The simulation results show that the driver can achieve up to 125 V/ns of dV/dt noise immunity and allow negative VS voltage overshoot up to -9.6 V at 15 V supply voltage. In addition, this paper theoretically analyzes the propagation delay of the improved level shift circuit. Compared with the traditional HVIC, the overall propagation delay of the HVIC has been optimized and reduced to about 54 ns.
