Cu/SiO₂ hybrid bonding technology is considered as an ideal solution for 3D integration of chips and high-density electrical interconnection. Both dielectric bonding and metal bonding should be taken into consideration in such technology. Therefore, few native self-developed hybrid bonding achievements with simple process and low cost have been developed in Chinese mainland. In this paper, existing wafer level bonding technologies were summarized, including direct bonding, activated bonding and solid-liquid inter-diffusion bonding. And the possibility of their application in hybrid bonding was deeply analyzed. Moreover, recent research progresses of Cu/SiO₂ hybrid bonding technologies were further summarized. Finally, the key factors to realize this technology were analyzed in principle. This review will provide a guidance for the domestic semiconductor industry to occupy this promising technical field.