In order to reduce the turn-off loss of LIGBT, a method to control the hole injection from the anode region by an additional PMOS had been reported. Based on that, a high speed SOI-LIGBT with a carrier storage layer was presented and analyzed. Some key parameters such as the dose of the P-top region, the length and doping concentration of the carrier storage layer were optimized by the two-dimensional TCAD simulator MEDICI. An optimized SOI-LIGBT with a breakdown voltage of 553 V and an on-state voltage of 1.73 V was obtained. Furthermore, due to the suppression of the hole injection during the turn-off process, the proposed SOI-LIGBT exhibited a high speed switching of 13 ns turn-off time, which was reduced by 87.6% compared with that of the conventional structures.