(电子科技大学 电子薄膜与集成器件国家重点实验室, 成都 610054)
( State Key Lab. of Elec. Thin Films and Integr. Dev. of China,Univ. of Elec. Sci. and Technol. of China, Chengdu 610054, P. R. China)
为了改善LIGBT的关断特性,已有一种采用PMOS管来控制LIGBT阳极空穴注入的方法。在此基础上,提出了一种具有载流子存储效应的高速SOI-LIGBT结构。采用二维仿真软件MEDICI,对器件P-top区的剂量、载流子存储层的长度、掺杂浓度等参数进行优化设计。结果表明,SOI-LIGBT的击穿电压为553 V,正向压降为1.73 V。关断时,引入的PMOS管可以阻止LIGBT阳极向漂移区注入空穴,使器件的关断时间下降到13 ns,相比传统结构下降了87.6%。
In order to reduce the turn-off loss of LIGBT, a method to control the hole injection from the anode region by an additional PMOS had been reported. Based on that, a high speed SOI-LIGBT with a carrier storage layer was presented and analyzed. Some key parameters such as the dose of the P-top region, the length and doping concentration of the carrier storage layer were optimized by the two-dimensional TCAD simulator MEDICI. An optimized SOI-LIGBT with a breakdown voltage of 553 V and an on-state voltage of 1.73 V was obtained. Furthermore, due to the suppression of the hole injection during the turn-off process, the proposed SOI-LIGBT exhibited a high speed switching of 13 ns turn-off time, which was reduced by 87.6% compared with that of the conventional structures.