A high efficiency negative charge pump with strong current driving capability was proposed. The charge pump was implemented with triple-well CMOS technology. The voltage gain per stage of the charge pump was increased by reducing the parasitic capacitance and the on-resistance of transfer devices, and eliminating the threshold voltage loss and the body effect of NMOS transistors, simultaneously. The charge pump was simulated in a 0.32 μm CMOS process. The results showed that the charge pump exhibited a higher output efficiency compared with the traditional negative charge pump, and the maximum output efficiency could reach 82%.